Title:
RF Micro Devices Based on Lithium Niobate Thin Film
RF Micro Devices Based on Lithium Niobate Thin Film
Time:
12/05 (Sat.) 6 pm PST, 7 pm MST, 8 pm CST, 9 pm EST
12/06 (Sun.) 10 am Taiwan
12/05 (Sat.) 6 pm PST, 7 pm MST, 8 pm CST, 9 pm EST
12/06 (Sun.) 10 am Taiwan
Keywords:
Engineering, RF-MEMS, piezoelectric device, lithium niobate, plate wave, surface acoustic wave
Engineering, RF-MEMS, piezoelectric device, lithium niobate, plate wave, surface acoustic wave
Abstract:
This talk briefly reviewed the latest progress and development work of lithium niobate (LiNbO3/LN) thin film devices. Theoretical work in 90s has shown that if thin-film lithium niobate can be realized, it can open up new horizons for various plate/Lamb wave modes with high electromechanical coupling and high phase velocity. To elaborate on the potential and performance of LN thin film devices for RF applications, this talk will first discuss the acoustic modes at a device designer’s disposal and their characteristics. Next, several demonstrations for overcoming the challenges in translating LN’s great material properties to working devices will be discussed.
This talk briefly reviewed the latest progress and development work of lithium niobate (LiNbO3/LN) thin film devices. Theoretical work in 90s has shown that if thin-film lithium niobate can be realized, it can open up new horizons for various plate/Lamb wave modes with high electromechanical coupling and high phase velocity. To elaborate on the potential and performance of LN thin film devices for RF applications, this talk will first discuss the acoustic modes at a device designer’s disposal and their characteristics. Next, several demonstrations for overcoming the challenges in translating LN’s great material properties to working devices will be discussed.