Title:
Relaxation Process of Donor Spin Qubits in Silicon
Relaxation Process of Donor Spin Qubits in Silicon
Time:
11/14 (Sat.) 5 pm PST, 6 pm MST, 7 pm CST, 8 pm EST
11/15 (Sun.) 9 am Taiwan
11/14 (Sat.) 5 pm PST, 6 pm MST, 7 pm CST, 8 pm EST
11/15 (Sun.) 9 am Taiwan
Keywords:
physics, quantum computing, spin-relaxation, semiconductor, spin-orbit, phonon, low-temperature
physics, quantum computing, spin-relaxation, semiconductor, spin-orbit, phonon, low-temperature
Abstract:
Understanding and controlling the spin-relaxation mechanism is crucial for realizing a spin-qubit based quantum computer. The spin-lattice relaxation time (T1) is one of the two important timescales of a qubit, and in addition, it can provide valuable information about the qubit and its interaction with the device environment. Here, we investigate the T1 time of electronic spins bound to donors in silicon in a scanning tunneling microscopy (STM) fabricated device. A tight-binding treatment of the electron-phonon problem is being developed. Together with Fermi's Golden rule the T1 time of the system can be obtained with atomic details. This method is extended to treat the multi-electron system, where the electron-electron interaction is captured by atomistic configuration interaction method. We show good agreements between this theory and recent experimental measurements.
Understanding and controlling the spin-relaxation mechanism is crucial for realizing a spin-qubit based quantum computer. The spin-lattice relaxation time (T1) is one of the two important timescales of a qubit, and in addition, it can provide valuable information about the qubit and its interaction with the device environment. Here, we investigate the T1 time of electronic spins bound to donors in silicon in a scanning tunneling microscopy (STM) fabricated device. A tight-binding treatment of the electron-phonon problem is being developed. Together with Fermi's Golden rule the T1 time of the system can be obtained with atomic details. This method is extended to treat the multi-electron system, where the electron-electron interaction is captured by atomistic configuration interaction method. We show good agreements between this theory and recent experimental measurements.
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